EVGA 122-CK-NF68 Uživatelská příručka stáhnout pdf (Strana 20)

Introduction

xix

Memory Timing

This section of the Adjust Motherboard Settings allows you to adjust various

memory timings and cycles.

 Row Address Strobe

Adjusts the minimum RAS active time. This is the amount of time between a

row being activated by Precharge and deactivated. A row cannot be

deactivated until tRAS has completed. The lower this value, the faster the

performance. However, if it is set too low it can cause data corruption by

deactivating the row to soon. Adjustable from 1 to 63.

 Write Recovery Time

Memory timing that determines the delay between a write command and a

Precharge command is set to the same bank of memory. Adjustable from 1

to 15.

 W to R Termination Turnaround

The Write-to-Read time is the number of clock cycles between the last write

data pair and the subsequent READ command to the same physical block.

Adjustable from 1 to 15.

 RAS to CAS access

The RAS-to-CAS access (tRCD) is the amount of time in cycles for issuing

an active command and the read/write commands. Adjustable from 1 to 15.

1 2 ... 15 16 17 18 19 20 21 22 23 24 25 ... 169 170

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EVGA 122-CK-NF68 Uživatelská příručka Strana 20